YQ5LAM10ETFTR Single Diodes_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

YQ5LAM10ETFTR

TRENCH MOS STRUCTURE, 100V, 5A

：

YQ5LAM10ETFTR

Single Diodes

ROHM Semiconductor

TRENCH MOS STRU

Tape & Reel (TR)

2970

: $0.8600

: 2970

$0.8600

$0.7700

$7.7000

$0.7300

$18.2500

100

$0.6000

$60.0000

250

$0.5600

$140.0000

500

$0.5000

$250.0000

1000

$0.3900

$390.0000

3000

$0.3700

$1,110.0000

6000

$0.3500

$2,100.0000

15000

$0.3300

$4,950.0000

30000

$0.3200

$9,600.0000

：

YQ5LAM10ETFTR

：

ROHM Semiconductor

：

TRENCH MOS STRU

：

Tape & Reel (TR)

：

2970

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	ROHM Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	SOD-128
Mounting Type	Surface Mount
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Technology	Schottky
Capacitance @ Vr, F	200pF @ 4V, 1MHz
Current - Average Rectified (Io)	5A
Supplier Device Package	PMDTM
Operating Temperature - Junction	175°C
Grade	Automotive
Voltage - DC Reverse (Vr) (Max)	100 V
Voltage - Forward (Vf) (Max) @ If	610 mV @ 5 A
Current - Reverse Leakage @ Vr	50 µA @ 100 V
Qualification	AEC-Q101