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  • image of IGBT Modules>VS-GT100TS065N
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VS-GT100TS065N
MODULES IGBT - IAP IGBT
VS-GT100TS065N
IGBT Modules
Vishay General Semiconductor – Diodes Division
MODULES IGBT -
-
Box
12
1
: $65.2300
: 12

1

$71.9800

$71.9800

15

$65.2300

$978.4500

105

$58.4800

$6,140.4000

image of IGBT Modules>VS-GT100TS065N
image of IGBT Modules>VS-GT100TS065N
VS-GT100TS065N
-
Vishay General Semiconductor – Diodes Division
MODULES IGBT -
-
Box
12
YES
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrVishay General Semiconductor – Diodes Division
Series-
PackageBox
Product StatusACTIVE
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationHalf Bridge Inverter
Operating Temperature-40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 100A
NTC ThermistorNo
Supplier Device PackageINT-A-PAK IGBT
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)96 A
Voltage - Collector Emitter Breakdown (Max)650 V
Power - Max259 W
Current - Collector Cutoff (Max)50 µA
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