VS-1N1206RA Single Diodes_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

VS-1N1206RA

DIODE GEN PURP 600V 12A DO203AA

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VS-1N1206RA

Single Diodes

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP

Bulk

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VS-1N1206RA

：

Vishay General Semiconductor – Diodes Division

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DIODE GEN PURP

：

Bulk

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YES

Product parameters

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TYPE	DESCRIPTION
Mfr	Vishay General Semiconductor – Diodes Division
Series	-
Package	Bulk
Product Status	ACTIVE
Package / Case	DO-203AA, DO-4, Stud
Mounting Type	Chassis, Stud Mount
Speed	Standard Recovery >500ns, > 200mA (Io)
Technology	Standard, Reverse Polarity
Current - Average Rectified (Io)	12A
Supplier Device Package	DO-203AA (DO-4)
Operating Temperature - Junction	-65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max)	600 V
Voltage - Forward (Vf) (Max) @ If	1.35 V @ 12 A
Current - Reverse Leakage @ Vr	1 mA @ 600 V