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TW015Z120C,S1F

G3 1200V SIC-MOSFET TO-247-4L 1

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TW015Z120C,S1F

Single FETs, MOSFETs

Toshiba Electronic Devices and Storage Corporation

G3 1200V SIC-MO

Tube

: $61.3300

: 98

$61.3300

$53.8900

$1,616.7000

120

$50.1800

$6,021.6000

：

TW015Z120C,S1F

：

Toshiba Electronic Devices and Storage Corporation

：

G3 1200V SIC-MO

：

Tube

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Toshiba Electronic Devices and Storage Corporation
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-247-4
Mounting Type	Through Hole
Operating Temperature	175°C
Technology	SiC (Silicon Carbide Junction Transistor)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Rds On (Max) @ Id, Vgs	21mOhm @ 50A, 18V
Power Dissipation (Max)	431W (Tc)
Vgs(th) (Max) @ Id	5V @ 11.7mA
Supplier Device Package	TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On)	18V
Vgs (Max)	+25V, -10V
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	6000 pF @ 800 V