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TRS12V65H,LQ

G3 SIC-SBD 650V 12A DFN8X8

：

TRS12V65H,LQ

Single Diodes

Toshiba Electronic Devices and Storage Corporation

G3 SIC-SBD 650V

Tape & Reel (TR)

4962

: $3.2800

: 4962

$3.2800

$2.7500

$27.5000

100

$2.2300

$223.0000

500

$1.9800

$990.0000

1000

$1.7000

$1,700.0000

2500

$1.6000

$4,000.0000

5000

$1.5300

$7,650.0000

：

TRS12V65H,LQ

：

Toshiba Electronic Devices and Storage Corporation

：

G3 SIC-SBD 650V

：

Tape & Reel (TR)

：

4962

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Toshiba Electronic Devices and Storage Corporation
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	4-VSFN Exposed Pad
Mounting Type	Surface Mount
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Technology	SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F	778pF @ 1V, 1MHz
Current - Average Rectified (Io)	12A
Supplier Device Package	4-DFN-EP (8x8)
Operating Temperature - Junction	175°C
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max) @ If	1.35 V @ 12 A
Current - Reverse Leakage @ Vr	120 µA @ 650 V