SSM3J145TU,LXHF Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

SSM3J145TU,LXHF

SMOS P-CH VDSS:-20V VGSS:-8/+6V

：

SSM3J145TU,LXHF

Single FETs, MOSFETs

Toshiba Electronic Devices and Storage Corporation

SMOS P-CH VDSS:

Tape & Reel (TR)

4346

: $0.3500

: 4346

$0.3500

$0.2700

$2.7000

100

$0.1600

$16.0000

500

$0.1500

$75.0000

1000

$0.1000

$100.0000

3000

$0.0900

$270.0000

6000

$0.0900

$540.0000

9000

$0.0800

$720.0000

30000

$0.0800

$2,400.0000

75000

$0.0800

$6,000.0000

image of Single FETs, MOSFETs>SSM3J145TU,LXHF

：

SSM3J145TU,LXHF

：

Toshiba Electronic Devices and Storage Corporation

：

SMOS P-CH VDSS:

：

Tape & Reel (TR)

：

4346

：

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Toshiba Electronic Devices and Storage Corporation
Series	U-MOSVI
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	3-SMD, Flat Leads
Mounting Type	Surface Mount
Operating Temperature	150°C
Technology	MOSFET (Metal Oxide)
FET Type	P-Channel
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Rds On (Max) @ Id, Vgs	103mOhm @ 1A, 4.5V
Power Dissipation (Max)	500mW (Ta)
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	UFM
Grade	Automotive
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Vgs (Max)	+6V, -8V
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	270 pF @ 10 V
Qualification	AEC-Q101