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SCT055W65G3-4AG
TO247-4
SCT055W65G3-4AG
Single FETs, MOSFETs
STMicroelectronics
TO247-4
-
Tube
0
1
: $8.8600
: 0

600

$8.8600

$5,316.0000

image of Single FETs, MOSFETs>SCT055W65G3-4AG
SCT055W65G3-4AG
-
STMicroelectronics
TO247-4
-
Tube
0
YES
SCT055W65G3-4AG
意法-ST
Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HiP247-4 package
SCT055W65G3-4AG
意法-ST
277049
Product parameters
TYPEDESCRIPTION
MfrSTMicroelectronics
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 200°C (TJ)
TechnologySiC (Silicon Carbide Junction Transistor)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs72mOhm @ 15A, 18V
Power Dissipation (Max)210W (Tc)
Vgs(th) (Max) @ Id4.2V @ 1mA
Supplier Device PackageTO-247-4
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Vgs (Max)+18V, -5V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs32 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds721 pF @ 40 V
QualificationAEC-Q101
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