PSMN1R9-40YSBX Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

PSMN1R9-40YSBX

PSMN1R9-40YSB/SOT669/LFPAK

：

PSMN1R9-40YSBX

Single FETs, MOSFETs

Nexperia

PSMN1R9-40YSB/S

Tape & Reel (TR)

: $0.6300

: 0

$1.4400

$1.1800

$11.8000

100

$0.9100

$91.0000

500

$0.7700

$385.0000

1500

$0.6300

$945.0000

3000

$0.5900

$1,770.0000

7500

$0.5700

$4,275.0000

10500

$0.5400

$5,670.0000

：

PSMN1R9-40YSBX

：

Nexperia

：

PSMN1R9-40YSB/S

：

Tape & Reel (TR)

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Nexperia
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	SC-100, SOT-669
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Rds On (Max) @ Id, Vgs	1.9mOhm @ 25A, 10V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	194W (Tc)
Vgs(th) (Max) @ Id	3.6V @ 1mA
Supplier Device Package	LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	6297 pF @ 20 V