PSMN1R5-40YSD/2X Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

PSMN1R5-40YSD/2X

PSMN1R5-40YSD/SOT669/LFPAK

：

PSMN1R5-40YSD/2X

Single FETs, MOSFETs

Nexperia

PSMN1R5-40YSD/S

Tape & Reel (TR)

: $0.8700

: 0

1500

$0.8700

$1,305.0000

3000

$0.8100

$2,430.0000

7500

$0.7800

$5,850.0000

10500

$0.7500

$7,875.0000

：

PSMN1R5-40YSD/2X

：

Nexperia

：

PSMN1R5-40YSD/S

：

Tape & Reel (TR)

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Nexperia
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	SC-100, SOT-669
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	240A (Tc)
Rds On (Max) @ Id, Vgs	1.5mOhm @ 25A, 10V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	238W (Tc)
Vgs(th) (Max) @ Id	3.6V @ 1mA
Supplier Device Package	LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	7752 pF @ 20 V