NXH004P120M3F2PTNG FET, MOSFET Arrays_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

NXH004P120M3F2PTNG

SILICON CARBIDE (SIC) MODULE EL

：

NXH004P120M3F2PTNG

FET, MOSFET Arrays

Sanyo Semiconductor/onsemi

SILICON CARBIDE

Tray

: $201.8400

: 0

$215.4900

$201.8400

$4,036.8000

$194.2500

$7,770.0000

：

NXH004P120M3F2PTNG

：

Sanyo Semiconductor/onsemi

：

SILICON CARBIDE

：

Tray

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Sanyo Semiconductor/onsemi
Series	-
Package	Tray
Product Status	ACTIVE
Package / Case	Module
Mounting Type	Chassis Mount
Configuration	2 N-Channel (Half Bridge)
Operating Temperature	-40°C ~ 175°C (TJ)
Technology	Silicon Carbide (SiC)
Power - Max	1.1kW (Tj)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	338A (Tj)
Input Capacitance (Ciss) (Max) @ Vds	16410pF @ 800V
Rds On (Max) @ Id, Vgs	5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs	876nC @ 20V
Vgs(th) (Max) @ Id	4.4V @ 120mA
Supplier Device Package	36-PIM (56.7x62.8)