NVHL025N065SC1 Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

NVHL025N065SC1

SIC MOS TO247-3L 650V

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NVHL025N065SC1

Single FETs, MOSFETs

Sanyo Semiconductor/onsemi

SIC MOS TO247-3

Tube

: $46.7800

: 0

$46.7800

$43.6400

$436.4000

$41.8100

$1,045.2500

100

$37.8900

$3,789.0000

：

NVHL025N065SC1

：

Sanyo Semiconductor/onsemi

：

SIC MOS TO247-3

：

Tube

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YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Sanyo Semiconductor/onsemi
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-247-3
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	SiC (Silicon Carbide Junction Transistor)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	99A (Tc)
Rds On (Max) @ Id, Vgs	28.5mOhm @ 45A, 18V
Power Dissipation (Max)	348W (Tc)
Vgs(th) (Max) @ Id	4.3V @ 15.5mA
Supplier Device Package	TO-247-3
Grade	Automotive
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Vgs (Max)	+22V, -8V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	3480 pF @ 325 V
Qualification	AEC-Q101