NTMFS2D3N04XMT1G Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

NTMFS2D3N04XMT1G

40V T10M IN S08FL PACKAGE

：

NTMFS2D3N04XMT1G

Single FETs, MOSFETs

Sanyo Semiconductor/onsemi

40V T10M IN S08

Tape & Reel (TR)

: $0.3900

: 0

$0.9100

$0.7900

$7.9000

100

$0.5500

$55.0000

500

$0.4600

$230.0000

1500

$0.3900

$585.0000

3000

$0.3500

$1,050.0000

7500

$0.3300

$2,475.0000

10500

$0.3000

$3,150.0000

：

NTMFS2D3N04XMT1G

：

Sanyo Semiconductor/onsemi

：

40V T10M IN S08

：

Tape & Reel (TR)

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Sanyo Semiconductor/onsemi
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerTDFN, 5 Leads
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	111A (Tc)
Rds On (Max) @ Id, Vgs	2.35mOhm @ 20A, 10V
Power Dissipation (Max)	53W (Tc)
Vgs(th) (Max) @ Id	3.5V @ 60µA
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	22.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1421 pF @ 20 V