+86-19926599677
  • image of Bipolar RF Transistors>NE85633-T1B-A
  • image of Bipolar RF Transistors>NE85633-T1B-A
NE85633-T1B-A
SAME AS 2SC3356 NPN SILICON AMPL
NE85633-T1B-A
Bipolar RF Transistors
CEL (California Eastern Laboratories)
SAME AS 2SC3356
-
Tape & Reel (TR)
27000
1
: $1.8000
: 27000

3000

$1.8000

$5,400.0000

9000

$1.4000

$12,600.0000

15000

$1.2000

$18,000.0000

image of Bipolar RF Transistors>NE85633-T1B-A
image of Bipolar RF Transistors>NE85633-T1B-A
NE85633-T1B-A
-
CEL (California Eastern Laboratories)
SAME AS 2SC3356
-
Tape & Reel (TR)
27000
YES
NE85633-T1B-A
CEL
NPN SILICON HIGH FREQUENCY TRANSISTOR
NE85633-T1B-A
瑞萨-Renesas
NPN SILICON TRANSISTOR
NE85633-T1B-A
瑞萨-Renesas
NPN SILICON TRANSISTOR
NE85633-T1B-A
瑞萨-Renesas
NPN SILICON TRANSISTOR
NE85633-T1B-A
瑞萨-Renesas
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
NE85633-T1B-A
CEL
NONLINEAR MODEL
NE85633-T1B-A
CEL
355122
NE85633-T1B-A
瑞萨-Renesas
355135
NE85633-T1B-A
瑞萨-Renesas
355132
NE85633-T1B-A
瑞萨-Renesas
355150
NE85633-T1B-A
瑞萨-Renesas
355154
NE85633-T1B-A
CEL
355156
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrCEL (California Eastern Laboratories)
Series-
PackageTape & Reel (TR)
Product StatusOBSOLETE
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain11.5dB
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 10V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1.1dB @ 1GHz
Supplier Device Package3-MINIMOLD
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