+86-19926599677
  • image of Single FETs, MOSFETs>IRL6283MTRPBF
  • image of Single FETs, MOSFETs>IRL6283MTRPBF
IRL6283MTRPBF
DIRECTFET N-CHANNEL POWER MOSFET
IRL6283MTRPBF
Single FETs, MOSFETs
International Rectifier
DIRECTFET N-CHA
-
Bulk
4800
1
: $1.0000
: 4800

302

$1.0000

$302.0000

image of Single FETs, MOSFETs>IRL6283MTRPBF
image of Single FETs, MOSFETs>IRL6283MTRPBF
IRL6283MTRPBF
-
International Rectifier
DIRECTFET N-CHA
-
Bulk
4800
YES
IRL6283MTRPBF
英飞凌-Infineon
20V 双 N 通道低逻辑电平 HEXFET Power MOSFET, 采用 DirectFET MD 无铅封装
IRL6283MTRPBF
英飞凌-Infineon
457784
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrInternational Rectifier
SeriesHEXFET®, StrongIRFET™
PackageBulk
Product StatusACTIVE
Package / CaseDirectFET™ Isometric MD
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C38A (Ta), 211A (Tc)
Rds On (Max) @ Id, Vgs0.75mOhm @ 50A, 10V
Power Dissipation (Max)2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id1.1V @ 100µA
Supplier Device PackageDIRECTFET™ MD
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs158 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds8292 pF @ 10 V
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