IRFP4332PBFXKMA1 Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

IRFP4332PBFXKMA1

TRENCH >=100V

：

IRFP4332PBFXKMA1

Single FETs, MOSFETs

IR (Infineon Technologies)

TRENCH >=100V

Tube

: $3.7900

: 0

400

$3.7900

$1,516.0000

：

IRFP4332PBFXKMA1

：

IR (Infineon Technologies)

：

TRENCH >=100V

：

Tube

：

YES

Product parameters

TYPE	DESCRIPTION
Mfr	IR (Infineon Technologies)
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-247-3
Mounting Type	Through Hole
Operating Temperature	-40°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	57A (Tc)
Rds On (Max) @ Id, Vgs	33mOhm @ 35A, 10V
Power Dissipation (Max)	360W (Tc)
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-247AC
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±30V
Drain to Source Voltage (Vdss)	250 V
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5860 pF @ 25 V