IRF6643TRPBFXTMA1 Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

IRF6643TRPBFXTMA1

TRENCH >=100V

：

IRF6643TRPBFXTMA1

Single FETs, MOSFETs

IR (Infineon Technologies)

TRENCH >=100V

Tape & Reel (TR)

: $0.9500

: 0

4800

$0.9500

$4,560.0000

9600

$0.9200

$8,832.0000

：

IRF6643TRPBFXTMA1

：

IR (Infineon Technologies)

：

TRENCH >=100V

：

Tape & Reel (TR)

：

YES

Product parameters

TYPE	DESCRIPTION
Mfr	IR (Infineon Technologies)
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	DirectFET™ Isometric MZ
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	6.2A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs	34.5mOhm @ 7.6A, 10V
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id	4.9V @ 150µA
Supplier Device Package	DirectFET™ Isometric MZ
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	150 V
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2340 pF @ 25 V