IRF225 Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

IRF225

N-CHANNEL HERMETIC MOS HEXFET

：

IRF225

Single FETs, MOSFETs

International Rectifier

N-CHANNEL HERME

Bulk

288

: $2.1600

: 288

139

$2.1600

$300.2400

：

IRF225

：

International Rectifier

：

N-CHANNEL HERME

：

Bulk

：

288

：

IRF225

瑞萨-Renesas

4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs

IRF225

英飞凌-Infineon

HEXFET TRANSISTORS

IRF225

英飞凌-Infineon

HEXFET® Power MOSFET ( VDSS = 40V , RDS(on) = 3.6mΩ , ID = 170A )

IRF225

英飞凌-Infineon

40V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

IRF225

英飞凌-Infineon

40V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

IRF225

NJS

Trans MOSFET N-CH 150V 4A 3-Pin(2+Tab) TO-3

IRF225

NJS

Trans MOSFET N-CH 150V 5A 3-Pin(2+Tab) TO-3

IRF225

NJS

Trans MOSFET N-CH 200V 4A 3-Pin(2+Tab) TO-3

IRF225

民承-MC-Power

高压VDMOS

IRF225

民承-MC-Power

高压VDMOS

IRF225

环球半导体-GlobalSemi

MOSFET

IRF225

瑞萨-Renesas

508041

IRF225

英飞凌-Infineon

508033

IRF225

英飞凌-Infineon

508034

IRF225

英飞凌-Infineon

508035

IRF225

英飞凌-Infineon

508037

IRF225

NJS

508038

IRF225

NJS

508039

IRF225

NJS

508040

IRF225

民承-MC-Power

508042

IRF225

民承-MC-Power

508043

IRF225

环球半导体-GlobalSemi

508045

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	International Rectifier
Series	-
Package	Bulk
Product Status	ACTIVE
Package / Case	TO-204AA, TO-3
Mounting Type	Through Hole
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	3.3A
Power Dissipation (Max)	40W
Supplier Device Package	TO-204AA (TO-3)
Drain to Source Voltage (Vdss)	250 V