IPTC026N12NM6ATMA1 Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

IPTC026N12NM6ATMA1

TRENCH >=100V

：

IPTC026N12NM6ATMA1

Single FETs, MOSFETs

IR (Infineon Technologies)

TRENCH >=100V

Tape & Reel (TR)

: $3.4300

: 0

$6.0500

$5.4600

$54.6000

$5.2100

$130.2500

100

$4.5200

$452.0000

250

$4.3200

$1,080.0000

500

$3.9400

$1,970.0000

1800

$3.4300

$6,174.0000

：

IPTC026N12NM6ATMA1

：

IR (Infineon Technologies)

：

TRENCH >=100V

：

Tape & Reel (TR)

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	IR (Infineon Technologies)
Series	OptiMOS™ 6
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	16-PowerSOP Module
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	26A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs	2.6mOhm @ 115A, 10V
Power Dissipation (Max)	3.8W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id	3.6V @ 169µA
Supplier Device Package	PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	120 V
Gate Charge (Qg) (Max) @ Vgs	88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	6500 pF @ 60 V