IPP70N12S311AKSA2 Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

IPP70N12S311AKSA2

MOSFET_(120V 300V)

：

IPP70N12S311AKSA2

Single FETs, MOSFETs

IR (Infineon Technologies)

MOSFET_(120V 30

Tube

: $1.7000

: 0

500

$1.7000

$850.0000

：

IPP70N12S311AKSA2

：

IR (Infineon Technologies)

：

MOSFET_(120V 30

：

Tube

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	IR (Infineon Technologies)
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-220-3
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Rds On (Max) @ Id, Vgs	11.6mOhm @ 70A, 10V
Power Dissipation (Max)	125W (Tc)
Vgs(th) (Max) @ Id	4V @ 83µA
Supplier Device Package	PG-TO220-3-1
Grade	Automotive
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	120 V
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4355 pF @ 25 V
Qualification	AEC-Q101