IPP076N15N5XKSA1 Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

IPP076N15N5XKSA1

TRENCH >=100V

：

IPP076N15N5XKSA1

Single FETs, MOSFETs

IR (Infineon Technologies)

TRENCH >=100V

Tube

: $3.4000

: 0

500

$3.4000

$1,700.0000

：

IPP076N15N5XKSA1

：

IR (Infineon Technologies)

：

TRENCH >=100V

：

Tube

：

YES

Product parameters

TYPE	DESCRIPTION
Mfr	IR (Infineon Technologies)
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-220-3
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	112A (Tc)
Rds On (Max) @ Id, Vgs	7.6mOhm @ 56A, 10V
Power Dissipation (Max)	214W (Tc)
Vgs(th) (Max) @ Id	4.6V @ 160µA
Supplier Device Package	PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	150 V
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4700 pF @ 75 V