IPD70N10S3L12ATMA2 Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

IPD70N10S3L12ATMA2

MOSFET_(75V 120V(

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IPD70N10S3L12ATMA2

Single FETs, MOSFETs

IR (Infineon Technologies)

MOSFET_(75V 120

Tape & Reel (TR)

: $1.1000

: 0

2500

$1.1000

$2,750.0000

5000

$1.0500

$5,250.0000

：

IPD70N10S3L12ATMA2

：

IR (Infineon Technologies)

：

MOSFET_(75V 120

：

Tape & Reel (TR)

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	IR (Infineon Technologies)
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Rds On (Max) @ Id, Vgs	11.5mOhm @ 70A, 10V
Power Dissipation (Max)	125W (Tc)
Vgs(th) (Max) @ Id	2.4V @ 83µA
Supplier Device Package	PG-TO252-3-11
Grade	Automotive
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5550 pF @ 25 V
Qualification	AEC-Q101