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IMBG65R015M2HXTMA1

SILICON CARBIDE MOSFET

：

IMBG65R015M2HXTMA1

Single FETs, MOSFETs

IR (Infineon Technologies)

SILICON CARBIDE

Tape & Reel (TR)

: $14.3800

: 0

$21.3500

$19.6900

$196.9000

$18.8100

$470.2500

100

$16.8200

$1,682.0000

250

$16.0400

$4,010.0000

500

$15.2700

$7,635.0000

1000

$14.3800

$14,380.0000

：

IMBG65R015M2HXTMA1

：

IR (Infineon Technologies)

：

SILICON CARBIDE

：

Tape & Reel (TR)

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	IR (Infineon Technologies)
Series	CoolSiC™ Gen 2
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	SiCFET (Silicon Carbide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	115A (Tc)
Rds On (Max) @ Id, Vgs	18mOhm @ 64.2A, 18V
Power Dissipation (Max)	416W (Tc)
Vgs(th) (Max) @ Id	5.6V @ 13mA
Supplier Device Package	PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On)	15V, 20V
Vgs (Max)	+23V, -7V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	2792 pF @ 400 V