IAUCN04S7L005ATMA1 Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

IAUCN04S7L005ATMA1

MOSFET_(20V 40V)

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IAUCN04S7L005ATMA1

Single FETs, MOSFETs

IR (Infineon Technologies)

MOSFET_(20V 40V

Tape & Reel (TR)

985

: $1.2900

: 985

$2.6800

$2.4100

$24.1000

$2.2700

$56.7500

100

$1.9700

$197.0000

250

$1.8700

$467.5000

500

$1.6800

$840.0000

1000

$1.4200

$1,420.0000

2500

$1.3400

$3,350.0000

5000

$1.2900

$6,450.0000

image of Single FETs, MOSFETs>IAUCN04S7L005ATMA1

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IAUCN04S7L005ATMA1

：

IR (Infineon Technologies)

：

MOSFET_(20V 40V

：

Tape & Reel (TR)

：

985

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	IR (Infineon Technologies)
Series	OptiMOS™ 7
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerTDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	430A (Tj)
Rds On (Max) @ Id, Vgs	0.52mOhm @ 88A, 10V
Power Dissipation (Max)	179W (Tc)
Vgs(th) (Max) @ Id	1.8V @ 95µA
Supplier Device Package	PG-TDSON-8-43
Grade	Automotive
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±16V
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	9415 pF @ 20 V
Qualification	AEC-Q101