IAUC120N04S6N008ATMA1 Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

IAUC120N04S6N008ATMA1

MOSFET_(20V 40V)

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IAUC120N04S6N008ATMA1

Single FETs, MOSFETs

IR (Infineon Technologies)

MOSFET_(20V 40V

Tape & Reel (TR)

: $1.2300

: 0

5000

$1.2300

$6,150.0000

：

IAUC120N04S6N008ATMA1

：

IR (Infineon Technologies)

：

MOSFET_(20V 40V

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Tape & Reel (TR)

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	IR (Infineon Technologies)
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerTDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	43A (Ta)
Rds On (Max) @ Id, Vgs	0.8mOhm @ 60A, 10V
Power Dissipation (Max)	150W (Tc)
Vgs(th) (Max) @ Id	3V @ 90µA
Supplier Device Package	PG-TDSON-8-43
Grade	Automotive
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	7150 pF @ 25 V
Qualification	AEC-Q101