HN1B04FE-GR,LXHF Bipolar Transistor Arrays_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

HN1B04FE-GR,LXHF

AUTO AEC-Q PNP + NPN TR VCEO:-50

：

HN1B04FE-GR,LXHF

Bipolar Transistor Arrays

Toshiba Electronic Devices and Storage Corporation

AUTO AEC-Q PNP

Tape & Reel (TR)

2353

: $0.4400

: 2353

$0.4400

$0.3800

$3.8000

100

$0.2600

$26.0000

500

$0.2100

$105.0000

1000

$0.1700

$170.0000

2000

$0.1500

$300.0000

4000

$0.1500

$600.0000

8000

$0.1400

$1,120.0000

12000

$0.1300

$1,560.0000

28000

$0.1300

$3,640.0000

image of Bipolar Transistor Arrays>HN1B04FE-GR,LXHF

：

HN1B04FE-GR,LXHF

：

Toshiba Electronic Devices and Storage Corporation

：

AUTO AEC-Q PNP

：

Tape & Reel (TR)

：

2353

：

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Toshiba Electronic Devices and Storage Corporation
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	SOT-563, SOT-666
Mounting Type	Surface Mount
Transistor Type	1 NPN, 1 PNP
Operating Temperature	150°C (TJ)
Power - Max	100mW
Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Frequency - Transition	80MHz
Supplier Device Package	ES6
Grade	Automotive
Qualification	AEC-Q101