GSFH10120 Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

GSFH10120

MOSFET, N-CH, SINGLE, 180.00A, 1

：

GSFH10120

Single FETs, MOSFETs

Good Ark Semiconductor

MOSFET, N-CH, S

Tube

942

: $1.6700

: 942

$1.6700

$1.5000

$15.0000

$1.4100

$35.2500

100

$1.2000

$120.0000

250

$1.1300

$282.5000

500

$0.9900

$495.0000

1000

$0.8200

$820.0000

2500

$0.7600

$1,900.0000

5000

$0.7400

$3,700.0000

：

GSFH10120

：

Good Ark Semiconductor

：

MOSFET, N-CH, S

：

Tube

：

942

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Good Ark Semiconductor
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-220-3
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Rds On (Max) @ Id, Vgs	4.4mOhm @ 50A, 10V
Power Dissipation (Max)	208W (Tc)
Vgs(th) (Max) @ Id	3.9V @ 250µA
Supplier Device Package	TO-220-3
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	8402 pF @ 50 V