G2K2P10D3E Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

G2K2P10D3E

MOSFET P-CH ESD 100V 10A DFN3*3-

：

G2K2P10D3E

Single FETs, MOSFETs

Goford Semiconductor

MOSFET P-CH ESD

Tape & Reel (TR)

4970

: $0.5800

: 4970

$0.5800

$0.4900

$4.9000

100

$0.3400

$34.0000

500

$0.2700

$135.0000

1000

$0.2200

$220.0000

2000

$0.1900

$380.0000

5000

$0.1800

$900.0000

10000

$0.1700

$1,700.0000

25000

$0.1700

$4,250.0000

50000

$0.1600

$8,000.0000

image of Single FETs, MOSFETs>G2K2P10D3E

：

G2K2P10D3E

：

Goford Semiconductor

：

MOSFET P-CH ESD

：

Tape & Reel (TR)

：

4970

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerVDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	P-Channel
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Rds On (Max) @ Id, Vgs	210mOhm @ 6A, 10V
Power Dissipation (Max)	31W (Tc)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1668 pF @ 50 V