E3M0075120J2-TR Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

E3M0075120J2-TR

75m, 1200V SiC FET, TO-263-7 XL

：

E3M0075120J2-TR

Single FETs, MOSFETs

Wolfspeed

75m, 1200V SiC

Tape & Reel (TR)

650

: $11.4200

: 650

$16.5400

$14.5700

$145.7000

100

$12.6000

$1,260.0000

800

$11.4200

$9,136.0000

：

E3M0075120J2-TR

：

Wolfspeed

：

75m, 1200V SiC

：

Tape & Reel (TR)

：

650

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Wolfspeed
Series	E
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	SiC (Silicon Carbide Junction Transistor)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Rds On (Max) @ Id, Vgs	97.5mOhm @ 17.9A, 15V
Power Dissipation (Max)	172W (Tc)
Vgs(th) (Max) @ Id	3.8V @ 5mA
Supplier Device Package	TO-263-7
Grade	Automotive
Drive Voltage (Max Rds On, Min Rds On)	15V
Vgs (Max)	+19V, -8V
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds	1480 pF @ 1000 V
Qualification	AEC-Q101