DMT35M4LPSW-13 Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

DMT35M4LPSW-13

MOSFET BVDSS: 25V~30V POWERDI506

：

DMT35M4LPSW-13

Single FETs, MOSFETs

Zetex Semiconductors (Diodes Inc.)

MOSFET BVDSS: 2

Tape & Reel (TR)

: $0.2300

: 0

2500

$0.2300

$575.0000

5000

$0.2100

$1,050.0000

12500

$0.2000

$2,500.0000

25000

$0.1900

$4,750.0000

：

DMT35M4LPSW-13

：

Zetex Semiconductors (Diodes Inc.)

：

MOSFET BVDSS: 2

：

Tape & Reel (TR)

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Zetex Semiconductors (Diodes Inc.)
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerTDFN
Mounting Type	Surface Mount, Wettable Flank
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	18.9A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs	5.5mOhm @ 20A, 10V
Power Dissipation (Max)	1.5W (Ta)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1029 pF @ 15 V