CAS530M12BM3 FET, MOSFET Arrays_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

CAS530M12BM3

SIC 2N-CH 1200V 630A

：

CAS530M12BM3

FET, MOSFET Arrays

Wolfspeed

SIC 2N-CH 1200V

Box

: $947.7000

: 0

$947.7000

$914.6400

$9,146.4000

：

CAS530M12BM3

：

Wolfspeed

：

SIC 2N-CH 1200V

：

Box

：

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Wolfspeed
Series	-
Package	Box
Product Status	ACTIVE
Package / Case	Module
Mounting Type	Chassis Mount
Configuration	2 N-Channel (Dual) Common Source
Operating Temperature	-40°C ~ 150°C (TJ)
Technology	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	630A (Tc)
Input Capacitance (Ciss) (Max) @ Vds	38900pF @ 800V
Rds On (Max) @ Id, Vgs	3.47mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs	1362nC @ 15V
Vgs(th) (Max) @ Id	3.6V @ 127mA