CAB006A12GM3T FET, MOSFET Arrays_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

CAB006A12GM3T

SIC 2N-CH 1200V 200A MODULE

：

CAB006A12GM3T

FET, MOSFET Arrays

Wolfspeed

SIC 2N-CH 1200V

Box

: $368.4100

: 0

$368.4100

$354.5600

$6,382.0800

：

CAB006A12GM3T

：

Wolfspeed

：

SIC 2N-CH 1200V

：

Box

：

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Wolfspeed
Series	-
Package	Box
Product Status	ACTIVE
Package / Case	Module
Mounting Type	Chassis Mount
Configuration	2 N-Channel (Half Bridge)
Operating Temperature	-40°C ~ 150°C (TJ)
Technology	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds	20400pF @ 800V
Rds On (Max) @ Id, Vgs	6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs	708nC @ 15V
Vgs(th) (Max) @ Id	3.6V @ 69mA
Supplier Device Package	Module