BSC105N15LS5ATMA1 Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

BSC105N15LS5ATMA1

TRENCH >=100V

：

BSC105N15LS5ATMA1

Single FETs, MOSFETs

IR (Infineon Technologies)

TRENCH >=100V

Tape & Reel (TR)

3500

: $2.1900

: 3500

$2.1900

$1.9700

$19.7000

$1.8600

$46.5000

100

$1.5800

$158.0000

250

$1.4900

$372.5000

500

$1.3000

$650.0000

1000

$1.0800

$1,080.0000

2500

$1.0000

$2,500.0000

5000

$0.9700

$4,850.0000

10000

$0.9300

$9,300.0000

image of Single FETs, MOSFETs>BSC105N15LS5ATMA1

：

BSC105N15LS5ATMA1

：

IR (Infineon Technologies)

：

TRENCH >=100V

：

Tape & Reel (TR)

：

3500

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	IR (Infineon Technologies)
Series	OptiMOS™ 5
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerTDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	10.7A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs	10.5mOhm @ 40A, 10V
Power Dissipation (Max)	2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id	2.3V @ 91µA
Supplier Device Package	PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	150 V
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 75 V