ALD210800PCL FET, MOSFET Arrays_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

ALD210800PCL

MOSFET 4N-CH 10.6V 0.08A 16DIP

：

ALD210800PCL

FET, MOSFET Arrays

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10

Tube

: $6.4100

: 0

$6.4100

$320.5000

：

ALD210800PCL

：

Advanced Linear Devices, Inc.

：

MOSFET 4N-CH 10

：

Tube

：

YES

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Advanced Linear Devices, Inc.
Series	EPAD®, Zero Threshold™
Package	Tube
Product Status	ACTIVE
Package / Case	16-DIP (0.300", 7.62mm)
Mounting Type	Through Hole
Configuration	4 N-Channel, Matched Pair
Operating Temperature	0°C ~ 70°C (TJ)
Technology	MOSFET (Metal Oxide)
Power - Max	500mW
Drain to Source Voltage (Vdss)	10.6V
Current - Continuous Drain (Id) @ 25°C	80mA
Input Capacitance (Ciss) (Max) @ Vds	15pF @ 5V
Rds On (Max) @ Id, Vgs	25Ohm
FET Feature	Logic Level Gate
Vgs(th) (Max) @ Id	20mV @ 10µA
Supplier Device Package	16-PDIP