2SJ529L06-E Single FETs, MOSFETs_Huizhong Dingtai_Passive Components_Memory Memory_Data Memory_Wires&Cables_Circuit Protection_Power Supply_Semiconductors_Optoelectronic Products_Sensors

2SJ529L06-E

2SJ529L06 - P-CHANNEL POWER MOSF

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2SJ529L06-E

Single FETs, MOSFETs

Renesas

2SJ529L06 - P-C

Bulk

60244

: $1.0200

: 60244

295

$1.0200

$300.9000

：

2SJ529L06-E

：

Renesas

：

2SJ529L06 - P-C

：

Bulk

：

60244

：

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Renesas
Series	-
Package	Bulk
Product Status	OBSOLETE
Package / Case	TO-251-3 Long Leads, IPak, TO-251AB
Mounting Type	Through Hole
Operating Temperature	150°C
Technology	MOSFET (Metal Oxide)
FET Type	P-Channel
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Rds On (Max) @ Id, Vgs	160mOhm @ 5A, 10V
Power Dissipation (Max)	20W (Tc)
Vgs(th) (Max) @ Id	2V @ 1mA
Supplier Device Package	DPAK(L)-(2)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	580 pF @ 10 V